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20N60

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

Fast Switching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel 650-V (D-S) Super Junction MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A4D

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

20N60B

HiPerFAST IGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60BD1

HiPerFAST IGBT with Diode

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin

IXYS

IXYS Integrated Circuits Division

20N60C2

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

20N60C3

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOS Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60G-T3P-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60G-T47-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60L-T3P-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60L-T47-T

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60S1

N-Channel enhancement mode power MOSFET

Features Lowon-stateresistance Lowswitchingloss easytouse(morecontrollabeswitchingdV/dtbyRg) Applications UPS Server Telecom Powerconditionersystem Powersupply

FujiFUJI CORPORATION

株式会社FUJI

20N60S5

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60_15

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60A

20A 600V N-channel enhanced field effect transistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60A4

600V, SMPS Series N-Channel IGBTs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

20N60CFD

HITACHI Encapsulation, DIP 16

HitachiHitachi, Ltd.

日立公司

详细参数

  • 型号:

    20N60

  • 制造商:

    UTC-IC

  • 制造商全称:

    UTC-IC

  • 功能描述:

    20A, 600V N-CHANNEL POWER MOSFET

供应商型号品牌批号封装库存备注价格
FSC
23+
原厂封装
9526
询价
FIRST进口
1215+
TO-220F
150000
全新原装,绝对正品,公司大量现货供应.
询价
INFINEON
23+
TO220
9980
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
LONTEN
17+
TO-220
25500
门市原装现货!支持实单,一片起卖!
询价
VBsemi
2022+
TO252
5000
只做原装公司现货
询价
AOS
2020+
TO-220F
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FSC
TO-220F
20000
优势库存
询价
TO-251
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
23+
N/A
49200
正品授权货源可靠
询价
REASUNOS
1948+
TO-3P
18562
只做原装正品现货!或订货假一赔十!
询价
更多20N60供应商 更新时间2024-5-2 17:00:00