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FQA28N50F

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA28N50F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH28N50

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFH28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFH28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFH28N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH28N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH28N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedIn

IXYS

IXYS Integrated Circuits Division

IXFT28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFT28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Integrated Circuits Division

IXFT28N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedIn

IXYS

IXYS Integrated Circuits Division

IXTH28N50Q

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH28N50Q

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt

IXYS

IXYS Integrated Circuits Division

IXTH28N50Q

PowerMOSFETsQ-Class

IRFInternational Rectifier

英飞凌英飞凌科技公司

IXTT28N50Q

PowerMOSFETsQ-Class

IRFInternational Rectifier

英飞凌英飞凌科技公司

IXTT28N50Q

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt

IXYS

IXYS Integrated Circuits Division

SLW28N50C

500VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半导体有限公司

详细参数

  • 型号:

    FDA28N50

  • 功能描述:

    MOSFET UniFET 500V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
21+
TO-3P
25000
询价
onsemi
24+
TO-3PN
30000
晶体管-分立半导体产品-原装正品
询价
FSC
23+
TO-3P
8000
原装正品,假一罚十
询价
ON
2020+
TO-3P
220000
原装正品,诚信经营。
询价
FSC
2020+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD/仙童
2021+
TO-3P-3L
3580
原装现货/15年行业经验欢迎询价
询价
ONSEMI
2021
NA
4050
全新原装!优势库存热卖中!
询价
FAIRCHILD/仙童
21+
TO-247
6000
原装正品
询价
FAI
1532+
TO247
250
原装现货只有原装
询价
FAIRCHILD/仙童
21+
TO247
9852
只做原装正品假一赔十!正规渠道订货!
询价
更多FDA28N50供应商 更新时间2024-6-13 14:00:00