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3632

VDSLModule

BournsBourns Inc.

伯恩斯(邦士)

AW3632

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

AW3632DNR

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

BA3632K

Pre/poweramplifierfor1.5Vheadphonestereos

TheBA3632Kisadual-channelpre/powersystemICdesignedfor1.5Vheadphonestereos.ThereisnoneedforDC/DCconversion,andthesystemcanoperateoffasinglebattery.TheICdrawslowcurrent(ICC=2.6mA)toallowlongsetlife. Features 1)Dualpre-amplifierswithautoreversecompat

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C3632

1700WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux42TEx226mm •Weight:10kg

POWERBOX

Powerbox manufactures

DS3632

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DS3632

CMOSDualPeripheralDrivers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

DS3632N

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

E3632A

ProgrammableDCPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

E3632S

2C12SOLIDBCFLEXOASFLEXFireAlarm/LifeSafetyCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

FDB3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FDB3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
FairchildSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
FAIRCHILD
23+
TO-2632L(
12300
全新原装真实库存含13点增值税票!
询价
Fairchild
1930+
N/A
89
加我qq或微信,了解更多详细信息,体验一站式购物
询价
FAIRCHILD/仙童
23+
TO-2632L(D2PAK)
32500
公司只做原装正品
询价
FAIRCHILD/仙童
23+
TO-2632L(D2PAK)
50000
全新原装正品现货,支持订货
询价
Fairchild
22+
NA
89
加我QQ或微信咨询更多详细信息,
询价
Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
Fairchild/ON
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原装,支持实单
询价
FAIRCHILD
TO-2632L(D2PAK)
68900
原包原标签100%进口原装常备现货!
询价
FAIRCHILD/仙童
2022+
TO-263
79999
询价
更多FDB3632/BKN供应商 更新时间2024-6-13 14:15:00