零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
MULTIPLEOUTPUTPROGRAMMABLELINEARD.C.POWERSUPPLY FEATURES *2,3,and4IndependentsolatedOutput *4LEDDisplaySets:3DigitsAfter DecimalPoint(GPD-23035/33035/43035) *MinimumResolution: ‘GPD-23035/33035/43035(1mV/1mA) ‘GPD-3303D(100mV/10mA) *DigitalPanelControl(RotaryEncoder Switch,RubberKeyWithIndicator) *User-frien | GWINSTEKGood Will Instrument Co., Ltd. 好威仪器股份好威仪器股份有限公司 | GWINSTEK | ||
MULTIPLEOUTPUTPROGRAMMABLELINEARD.C.POWERSUPPLY FEATURES *2,3,and4IndependentsolatedOutput *4LEDDisplaySets:3DigitsAfter DecimalPoint(GPD-23035/33035/43035) *MinimumResolution: ‘GPD-23035/33035/43035(1mV/1mA) ‘GPD-3303D(100mV/10mA) *DigitalPanelControl(RotaryEncoder Switch,RubberKeyWithIndicator) *User-frien | GWINSTEKGood Will Instrument Co., Ltd. 好威仪器股份好威仪器股份有限公司 | GWINSTEK | ||
195WATTLINEAR | POWERBOX Powerbox manufactures | POWERBOX | ||
MULTIPLEOUTPUTLINEARD.C.POWERSUPPLY | GWINSTEKGood Will Instrument Co., Ltd. 好威仪器股份好威仪器股份有限公司 | GWINSTEK | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ULTRALOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJI |
2017+ |
DIP-20 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
23+ |
N/A |
85700 |
正品授权货源可靠 |
询价 | |||
FUJI/富士电机 |
DIP-20 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
FUJI/富士电机 |
23+ |
DIP-20 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FUJI/富士电机 |
21+ROHS |
DIP-20 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FUJI |
22+ |
DIP-20 |
8000 |
原装正品支持实单 |
询价 | ||
FUJI/富士电机 |
23+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
qlogic |
BGA |
1200 |
正品原装--自家现货-实单可谈 |
询价 | |||
qlogic |
2022 |
BGA |
2600 |
全新原装现货热卖 |
询价 | ||
qlogic |
23+ |
BGA |
1800 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 |
相关规格书
更多- FA3635
- FA3641
- FA5301P
- FA5304S-TE1
- FA5310
- FA5310S-TE1
- FA5311B
- FA5311S-TE1
- FA5315
- FA5317
- FA5331M-TE1
- FA5332M-TE1
- FA5511
- FA7610N-TE1
- FA7612
- FA7615M-TE2
- FA82371MX
- FAN1537PA
- FAN1537PB
- FAN5056MV85
- FAN5063M
- FAN5066M
- FAN5091MTC
- FAN5093MTC
- FAN5236MTC
- FAN5240MTC
- FAN7554
- FAN8024DTF
- FAN8038B
- FAN8727
- FB2031BB
- FB2033BB
- FB2033K
- FB2041BB
- FC117-TL
- FC80960HD66
- FDA207
- FDB6035AL
- FDB6670AL
- FDB7030L
- FDC37B807
- FDC37C65CLJP
- FDC37C665IR
- FDC37C669QFP
- FDC37C672QFP
相关库存
更多- FA3635P
- FA4105A
- FA5304
- FA5305
- FA5310B
- FA5311
- FA5311P
- FA5314
- FA5316
- FA5317S-TE1
- FA5331P
- FA5332P
- FA7610
- FA7611M-TE1
- FA7615M
- FA7617
- FA82438MX
- FAN1537PAC
- FAN2500SX
- FAN5059M
- FAN5063MX
- FAN5071M
- FAN5091MTCX
- FAN5093MTCX
- FAN5236QSC
- FAN7527
- FAN8024BD
- FAN8034L
- FAN8082
- FB2031
- FB2033A
- FB2033H
- FB2040
- FC101-TL
- FC80486DX4-100
- FD-1400-AJ
- FDB6030L
- FDB603AL
- FDB7030BL
- FDB7045L
- FDC37C651QFP
- FDC37C665GT
- FDC37C669
- FDC37C672
- FDC37C673