IRFR3303中文资料PDF规格书
IRFR3303规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR3303)
● Straight Lead (IRFU3033)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
产品属性
- 型号:
IRFR3303
- 功能描述:
MOSFET N-CH 30V 33A DPAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
05+ |
TO-252 |
15000 |
原装进口 |
询价 | ||
IR/VISHAY |
TO-252-2 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ir |
dc04 |
原厂封装 |
375 |
INSTOCK:75/tube/dpak |
询价 | ||
IR |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
renesas |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
IR |
23+ |
D-Pak |
7600 |
全新原装现货 |
询价 | ||
IR |
23+ |
NA/ |
26 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
07+ |
TO-252 |
709 |
询价 | |||
IR |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 |