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IRFR3303PBF中文资料PDF规格书

IRFR3303PBF
厂商型号

IRFR3303PBF

功能描述

HEXFET Power MOSFET

文件大小

3.84104 Mbytes

页面数量

10

生产厂商 Kersemi Electronic Co., Ltd.
企业简称

KERSEMI

中文名称

Kersemi Electronic Co., Ltd.官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-14 22:59:00

IRFR3303PBF规格书详情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Ultra Low On-Resistance

● Surface Mount (IRFR3303)

● Straight Lead (IRFU3033)

● Advanced Process Technology

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

产品属性

  • 型号:

    IRFR3303PBF

  • 功能描述:

    MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA/
18000
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IOR
2020+
TO-252
80000
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IR
22+
TO252
9800
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Infineon
22+
NA
2118
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IR
23+
D2PAK
7750
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IR
TO252
6000
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IR
23+
TO-252AA
12300
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IR
2022
TO252
80000
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IR
23+
TO-252
4500
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IR
2024+实力库存
TO252
15000
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询价