CEW80N15规格书原装现货華瑞CET-MOS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEW80N15	文件：573.2 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP80N15	文件：1.86036 Mbytes Page：7 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FTK80N15P	文件：929.81 Kbytes Page：5 Pages	150VN-ChannelMOSFETs	FS First Silicon Co., Ltd	FS
HM80N15	文件：427.71 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS80N15	文件：615.75 Kbytes Page：6 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS80N15D	文件：526.31 Kbytes Page：5 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IXFH80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH80N15Q	文件：372.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15	文件：324.72 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFR80N15Q	文件：47.12 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFT80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
RU80N15Q	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS
RU80N15R	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	CEWAYPL-ONE	DOMOSYS	23+	PLCC	2870	绝对全新原装!现货!特价!请放心订购!	询价
深圳市欧立现代科技有限公司	CEWAYPL-ONE	DOMOSYS	24+	PLCC	6980	原装现货,可开13%税票	询价
上海市鑫鸿达电子	CEX1000HDT-1	SWITCHCORE	2022+		20	全新原装货期两周	询价
深圳市伟胜微电子有限公司	CEX178-00		18+	DIP17	999999	进口全新原装现货	询价
深圳市威尔健半导体有限公司	CEX203-00	N/A	23+	SMD	50000	全新原装正品现货,支持订货	询价
深圳市得捷芯城科技有限公司	CEX203-00	N/A	23+	NA/	3450	原装现货,当天可交货,原型号开票	询价
深圳市创新迹电子有限公司	CEX203-00	N/A	22+	SMD	25000	只做原装,原装,假一罚十	询价
深圳市安富世纪电子有限公司	CEXB015-3	ON/安森美	23+		6500	专注配单,只做原装进口现货	询价
北京京北通宇电子元件有限公司	cExpress-AL-E3940	ADLINK Technology	22	sop	10000	现货常备产品原装可到京北通宇商城查价格	询价
深圳市鹏顺微电子科技有限公司	CEXPRESS-BL-I5-5350U	ADLINK	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价

更多CEW80N15供应商更新时间2024-6-18 16:30:00

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