HM80N15资料使用说明书供应价格HMSEMI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HM80N15	文件：427.71 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
CEB80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP80N15	文件：1.86036 Mbytes Page：7 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEW80N15	文件：573.2 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FTK80N15P	文件：929.81 Kbytes Page：5 Pages	150VN-ChannelMOSFETs	FS First Silicon Co., Ltd	FS
HMS80N15	文件：615.75 Kbytes Page：6 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS80N15D	文件：526.31 Kbytes Page：5 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IXFH80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH80N15Q	文件：372.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15	文件：324.72 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFR80N15Q	文件：47.12 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFT80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
RU80N15Q	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS
RU80N15R	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市慧业盛科技有限公司	HM80R08	华虹挚芯	22+	N/A	18634	全新原装	询价
深圳市凌旭科技有限公司	HM8101	AEROSEMI	2016+	SOT23-5L	60000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科恒伟业电子有限公司	HM8101	AEROSEMI	1844+	SOT23-5L	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市锐视安科技有限公司	HM8101	MT	16+PB	SOT23-5	3067	原装正品现货,可开发票,假一赔十	询价
深圳市盈宏半导体科技有限公司	HM8101	MT	16+PB	SOT23-5	718	刚到现货加微13425146986	询价
深圳市芯祺盛科技有限公司	HM8101	HZM	2018+	SOT23-5	13692	代理DC-DC降压IC优势产品	询价
深圳兆威电子有限公司	HM8101	MT	23+	SOT23-5	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市汇莱威科技有限公司	HM8101	AEROSEMI		SOT23-5L	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	HM8101	AEROSEMI	23+	SOT23-5L	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	HM8101	MT	21+	SOT23-5	50000	全新原装正品现货,支持订货	询价

更多HM80N15供应商更新时间2024-6-12 13:00:00

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