CED63A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,55A,RDS(ON)=11mΩ@VGS=10V. RDS(ON)=14mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEB63A3

N-ChannelEnhancementModeFieldEffectTransistor

CEP63A3

N-ChannelEnhancementModeFieldEffectTransistor

CEU63A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,55A,RDS(ON)=11mΩ@VGS=10V. RDS(ON)=14mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM63A3PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT55Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.