CED83A3G资料datasheet下载贸易商华瑞CET-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CED83A3G	文件：421.09 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mΩ@VGS=10V. RDS(ON)=8.0mΩ@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3	文件：895.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3	文件：141.76 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mΩ@VGS=10V. RDS(ON)=8.0mΩ@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：401.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU83A3	文件：141.76 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU83A3	文件：1.01372 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU83A3	文件：895.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU83A3G	文件：421.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CHM83A3PAPT	文件：345.44 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT80Ampere FEATURE Smallpackage.(TO-252A) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO

详细参数

型号：
CED83A3G
制造商：
CET
制造商全称：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	CED83A3G	CET/華瑞	24+	PO-251	156726	明嘉莱只做原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	CED83A3G	SR	23+	TO-251	7000	原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	CED83A3G		23+	N/A	46080	正品授权货源可靠	询价
深圳市鼎欣微电子有限公司	CED83A3G	CET/華瑞	21+	TO-251	30000	只做正品原装现货	询价
艾睿国际（香港）有限公司	CED83A3G	CET(华瑞)	2112+	TO-251(I-PAK)	105000	80个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市保之丰科技有限公司	CED83A3G	VBsemi	21+	TO-251	15500		询价
深圳市汇莱威科技有限公司	CED83A3G	VBSEMI/台湾微碧		TO-251	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	CED83A3G	C	23+	TO-251	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	CED83A3G	VBSEMI/台湾微碧	23+	TO-251	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	CED83A3G	CET/華瑞	2022+	TO-251	50000	原厂代理终端免费提供样品	询价

更多CED83A3G供应商更新时间2024-5-17 18:06:00

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