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BFP640FESD分立半导体产品晶体管-双极(BJT)-射频规格书PDF中文资料
厂商型号 |
BFP640FESD |
参数属性 | BFP640FESD 封装/外壳为4-SMD,扁平引线;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品 > 晶体管 - 双极(BJT)- 射频;产品描述:RF TRANS NPN 4.7V 46GHZ 4TSFP |
功能描述 | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
文件大小 |
1.64277 Mbytes |
页面数量 |
28 页 |
生产厂商 | Infineon Technologies AG |
企业简称 |
Infineon【英飞凌】 |
中文名称 | 英飞凌科技公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-8 8:50:00 |
BFP640FESD规格书详情
Product Brief
The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 46 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
Features
• Robust very low noise amplifier based on Infineon´s
reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 1.5 GHz,
0.65 dB at 2.4 GHz, 6 mA
• 28.5 dB maximum gain Gms typical at 1.5 GHz,
25 dB Gms at 2.4 GHz, 30 mA
• 26 dBm OIP3 typical at 2.4 GHz, 30 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
Applications
As Low Noise Amplifier (LNA) in
• Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile / portable TV, CATV, FM radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
BFP640FESD属于分立半导体产品 > 晶体管 - 双极(BJT)- 射频。英飞凌科技公司制造生产的BFP640FESD晶体管 - 双极(BJT)- 射频双极型射频晶体管是一种具有三个端子的半导体器件,用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP,特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。
产品属性
- 产品编号:
BFP640FESDH6327XTSA1
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - 双极(BJT)- 射频
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 晶体管类型:
NPN
- 电压 - 集射极击穿(最大值):
4.7V
- 频率 - 跃迁:
46GHz
- 噪声系数(dB,不同 f 时的典型值):
0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
- 增益:
8B ~ 30.5dB
- 功率 - 最大值:
200mW
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
110 @ 30mA,3V
- 电流 - 集电极 (Ic)(最大值):
50mA
- 工作温度:
150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
4-SMD,扁平引线
- 供应商器件封装:
4-TSFP
- 描述:
RF TRANS NPN 4.7V 46GHZ 4TSFP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2022+ |
3000 |
6600 |
只做原装,假一罚十,长期供货。 |
询价 | ||
Infineon/英飞凌 |
23+ |
TSFP-4 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
23+ |
TSFP-4 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SOT23-3 |
17814 |
原装进口假一罚十 |
询价 | ||
Infineon/英飞凌 |
2023+ |
TSFP-4 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
Infineon Technologies |
2022+ |
4-TSFP |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Infineon(英飞凌) |
23+ |
TSFP4 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Infineon(英飞凌) |
23+ |
TSFP4 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
Infineon/英飞凌 |
TSFP-4 |
6000 |
询价 | ||||
INFINEON |
22+ |
SMD |
5000 |
十年沉淀唯有原装 |
询价 |