零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forhighestgainandlownoiseamplifier •OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •ForESDprotectedhighgainlownoiseamplifier •HighESDrobustness typicalvalue1000V(HBM) •OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackage withvi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor •Forhighestgainlownoiseamplifierat1.8GHz •OutstandingGms=20dB NoiseFigureF=0.9dB •Goldmetallizationforhighreliability •SIEGET45-Line | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransisto NPNSiliconRFTransistor* •ForESDprotectedhighgainlownoiseamplifier •ExcellentESDperformancetypicalvalue1000V(HBM) •OutstandingGms=20dB NoiseFigureF=0.9dB •SIEGET®45-Line •Pb-free(ROHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdesc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconNPNRFTransistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
iscSiliconNPNRFTransistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNwidebandtransistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNwidebanddualtransistor DESCRIPTION NPNwidebandtransistorinaSOT89 plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNwidebandtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION TheBFR540isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MA | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforRFfrontendinwidebandapplicationsinthe GHzrange,suchasanaloganddigitalcellulartelephones, cordlesstelephones(CT1,CT2,DEC,etc.). | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
表面帖装型 (SMD)_超高频/特高频 (UHF)
- 封装形式:
贴片封装
- 极限工作电压:
20V
- 最大电流允许值:
0.12A
- 最大工作频率:
9GHZ
- 引脚数:
3
- 可代换的型号:
- 最大耗散功率:
- 放大倍数:
- 图片代号:
H-17
- vtest:
20
- htest:
9000000000
- atest:
.12
- wtest:
0
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
46048 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
NXP/恩智浦 |
SOT143 |
7906200 |
询价 | ||||
NXP |
13+ |
55000 |
特价热销现货库存 |
询价 | |||
PHI |
08+ |
SOT-143 |
18000 |
询价 | |||
PHILIPS |
23+ |
SOT143 |
7750 |
全新原装优势 |
询价 | ||
PHILIPS |
678 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | ||||
PH |
2339+ |
SOT-23 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
NXP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
PHI |
16+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
PHI |
22+ |
SOT143 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |