| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
iscSiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •ComplementtoTypeBD539A APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) •ComplementtoTypeBD539B APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | POINN | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | POINN | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
iscSiliconPNPPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
5.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200Volts CURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinl | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN9GHzWidebandTransistor ■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
表面帖装型 （SMD）_超高频/特高频 （UHF）
- 封装形式：
贴片封装
- 极限工作电压：
20V
- 最大电流允许值：
0.12A
- 最大工作频率：
9GHZ
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
- 放大倍数：
- 图片代号：
H-17
- vtest：
20
- htest：
9000000000
- atest：
.12
- wtest：
0
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
46048 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
NXP/恩智浦 |
SOT143 |
7906200 |
询价 | ||||
NXP |
13+ |
55000 |
特价热销现货库存 |
询价 | |||
PHI |
08+ |
SOT-143 |
18000 |
询价 | |||
PHILIPS |
23+ |
SOT143 |
7750 |
全新原装优势 |
询价 | ||
PHILIPS |
678 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | ||||
PH |
2339+ |
SOT-23 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
NXP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
PHI |
16+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
PHI |
22+ |
SOT143 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |
