BFP136

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability

BFP136

NPN Silicon RF Transistor

NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability

BFP136W

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability

BFP136W

NPN Silicon RF Transistor

NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability

BFP180

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz •F=2.1dBat900MHz

BFP180W

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz •F=2.1dBat900MHz

BFP180W

NPN Silicon RF Transistor

NPNSiliconRFTransistor ●Forlow-poweramplifierinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2mAto2.5mAfT=7GHz ●F=2.1dBat900MHz

BFP181

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

BFP181R

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181R

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181T

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181TRW

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181TW

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181W

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181W

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP182

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz

BFP182

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,F=0.9dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

BFP182R

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz

BFP182R

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available