| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SCHOTTKYBARRIERDIODE FEATURES ●HighSwitchingSpeed ●LowForwardVoltage ●GuardRingProtected APPLICATIONS ●VoltageClamping ●ProtectionCircuits | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES ●HighSwitchingSpeed ●LowForwardVoltage ●GuardRingProtected APPLICATIONS ●VoltageClamping ●ProtectionCircuits | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Schottkybarrierdiode | DSK Diode Semiconductor Korea | DSK | ||
350mWSchottkyDiodes40Volts Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •VeryLowForwardVoltageDrop •GuardRingProtected •UntralSmallSurfaceMountPackage •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHSCompliant.SeeOrderingInformation) •EpoxyMeetsUL94V-0Flammabilit | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
Schottkybarrierdiode ■Features ●Ultrahighswitchingspeed ●Lowforwardvoltage ●Guardringprotected | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Schottkybarrierdiode FEATURES ●Ultrahighswitchingspeed. ●Lowforwardvoltage. ●Guardringprotected. ●SmallplasticSMDpackage. APPLICATIONS ●Ultrahigh-speedswitching. ●Voltageclamping. ●Protectioncircuits. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
Schottkybarrierdiode DESCRIPTION PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotectioninasmallSOT23plasticSMDpackage. FEATURES •Ultrahighswitchingspeed •Lowforwardvoltage •Guardringprotected •SmallplasticSMDpackage. APPLICATIONS •Ultrahigh-speedswitching •V | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Schottkybarrierdiode 1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina smallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q10 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES ●HighSwitchingSpeed ●LowForwardVoltage ●GuardRingProtected APPLICATIONS ●VoltageClamping ●ProtectionCircuits | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
350mWSchottkyDiodes40Volts Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •VeryLowForwardVoltageDrop. •GuardRingProtected •UntralSmallSurfaceMountPackage •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(PSuffixDesignates | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
SiliconPNPPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconPNPPowerTransistor DESCRIPTION ·DCCurrentGain-:hFE=40@IC=-0.5A ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) ·ComplementtotypeBD719 APPLICATIONS ·Designedforuseinaudiooutputandgeneralpurposeamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720isaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=25mA.Thed | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor ProductBrief TheBFP720ESDisaSiliconGermaniumCarbon(SiGe:C)NPNHeterojunctionwidebandBipolarRFTransistor(HBT)inaplasticdualemitterstandardpackagewithvisibleleads.Thedeviceisfittedwithinternalprotectioncircuits,whichenhancerobustnessagainstESDandhighRFinput | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720FisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=25mA.Th | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES | edi edi | edi |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
表面帖装型 （SMD）_视频输出 （Vid）
- 封装形式：
贴片封装
- 极限工作电压：
300V
- 最大电流允许值：
0.05A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
1.5W
- 放大倍数：
- 图片代号：
H-99
- vtest：
300
- htest：
999900
- atest：
.05
- wtest：
1.5
详细参数
- 型号：
BF720
- 制造商：
NXP Semiconductors
- 功能描述：
TRANSISTOR NPN SOT-223
- 功能描述：
TRANSISTOR, NPN, SOT-223
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS |
23+ |
SOT223 |
123000 |
专注原装正品现货特价中量大可定 |
询价 | ||
NEXPERIA/安世 |
2019+ |
SOT-223 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
NEXPERIA/安世 |
20+ |
SOT-223 |
120000 |
原装正品 可含税交易 |
询价 | ||
PHILIPS/飞利浦 |
2021+ |
SOT-223 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
NXP/恩智浦 |
SOT223 |
7906200 |
询价 | ||||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-223 |
6759 |
新进库存/原装 |
询价 | ||
NXP |
2017+ |
SOT223 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
PHI |
13+ |
SOT-223 |
7500 |
特价热销现货库存 |
询价 | ||
PHILIPS |
97+ |
1846 |
原装正品现货供应 |
询价 | |||
NXP |
16+ |
SOT223 |
3786 |
一片起订!原装低价支持实单! |
询价 |
