Product Brief

The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features

• High performance general purpose wideband LNA transistor

• Operation voltage: 1.0 V to 4.0 V

• Transistor geometry optimized for low current applications

• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA

• 15 dB maximum available gain at 10 GHz and only 13 mA

• 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz

• High linearity OP1dB = 7 dBm and OIP3 = 21 dBm at 5.5 GHz

and low current consumption of 13 mA

• Thin small flat Pb-free (RoHS compliant) and halogen-free

package with visible leads

• Qualification report according to AEC-Q101 available

Applications

FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB

BFP720F属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。英飞凌科技公司制造生产的BFP720F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。