| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.52Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | Vishay | ||
RepetitiveAvalancheRated | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPOWERMOSFETTHRU-HOLE(TO-257AA) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=11A •Dr | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=11A •Dr | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCHANNELMOSFIELD GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=11A •Dr | KECKEC CORPORATION KEC株式会社 | KEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2410+ |
TO-220 |
5630 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
IR |
22+23+ |
TO-220 |
24943 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
AUK |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ST/意法半导体 |
22+ |
SOT-263 |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST/意法半导体 |
SOT-263 |
22+ |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST |
22+ |
TO-263 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST |
23+ |
TO263 |
7300 |
专注配单,只做原装进口现货 |
询价 |
相关规格书
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