| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
500VN-CHANNELMOSFET DESCRIPTION TheUTC11N50isanN-channelenhancementmodepowerMOSFET.ItusesUTCadvancedplanarstripe,DMOStechnologytoprovidecustomersperfectswitchingperformance,minimalon-stateresistance.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. TheU | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
11A,500VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.52ohm,Id=11A) Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.725Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.52ohm,Id=11A) Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.52ohm,Id=11A) Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.52Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu | VishayVishay Siliconix 威世科技 | Vishay | ||
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) Applications •SwitchModePowerSupply(SMPS) •Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+23+ |
TO-220 |
24943 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
23+ |
N/A |
46080 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
ST |
2017+ |
TO263 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
AUK |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ST |
2022+ |
TO263 |
7300 |
原装现货 |
询价 | ||
ST/意法半导体 |
22+ |
SOT-263 |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST/意法半导体 |
SOT-263 |
22+ |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 |
相关规格书
更多- B140
- B2008
- B2023V1.1
- B57846
- B57926
- B58068
- B58261
- B58328TS
- B58388
- B58466
- B58484
- B58504
- B58748
- B59233
- B59458
- B59702
- B59728
- B59762
- B65554
- B772
- BA00ASFP-E2
- BA033F-E2
- BA033ST
- BA05FP-E2
- BA05ST
- BA08FP-E2
- BA10324A
- BA10324AF-E2
- BA10324F
- BA10339F
- BA10358
- BA10358F-E2
- BA10358N
- BA10393F
- BA10393F-E2
- BA10393N
- BA1106F
- BA12003BF
- BA13002F
- BA1332
- BA1356
- BA1362F
- BA1404F
- BA1405F
- BA14741
相关库存
更多- B140-13
- B2013
- B57574
- B57914
- B57942
- B58228
- B58290
- B58345
- B58461
- B58468
- B58502
- B58728
- B58908
- B59388
- B59458R4839
- B59703
- B59759
- B59763
- B69000
- B834
- BA033
- BA033FP-E2
- BA033T
- BA05SFP-E2
- BA05T
- BA10324
- BA10324AF
- BA10324AFV-E2
- BA10339
- BA10339F-E2
- BA10358F
- BA10358FV-E2
- BA10393
- BA10393F-E1
- BA10393F-T1
- BA10FP-E2
- BA12003
- BA12004
- BA1320
- BA1332L
- BA1360
- BA1404
- BA1405
- BA1450S
- BA14741F
