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11N06	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06LT	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06T	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PJD11N06A	文件：908.72 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
PJD11N06A-AU	文件：820.13 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏世佳电子科技有限公司	B11N06	IR	2023+	TO252	3536	全新原厂原装产品、公司现货销售	询价
深圳市华斯顿科技有限公司	B11N50A	IR	22+23+	TO-220	24943	绝对原装正品全新进口深圳现货	询价
深圳市科恒伟业电子有限公司	B11N50A	TH/韩国太虹	2048+	TO-220	9851	只做原装正品现货!或订货假一赔十!	询价
深圳市百视威讯电子科技有限公司	B11N60		23+	N/A	46080	正品授权货源可靠	询价
深圳兆威电子有限公司	B11N60	VB	2019	TO-263	55000	绝对原装正品假一罚十!	询价
深圳市九方航科技有限公司	B11N60	VBSEMI	19+	TO-263	29600	绝对原装现货,价格优势!	询价
深圳市莱克讯科技有限公司	B11NB40	ST	2017+	TO263	35689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市威尔健半导体有限公司	B11NB40	AUK	23+	SOT-23	69820	终端可以免费供样,支持BOM配单!	询价
深圳市大联智电子有限公司	B11NB40	ST	2022+	TO263	7300	原装现货	询价
深圳市赛特兴科技有限公司	B11NB40	ST	22+	TO-263	10000	正规渠道,只有原装!	询价

更多B11N06供应商更新时间2024-4-28 15:38:00

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