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PHT11N06	文件：75.34 Kbytes Page：10 Pages	TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：69.16 Kbytes Page：9 Pages	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06LT	文件：69.16 Kbytes Page：9 Pages	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06T	文件：75.34 Kbytes Page：10 Pages	TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PJD11N06A	文件：908.72 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
PJD11N06A-AU	文件：820.13 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT

详细参数

型号：
PHT11N06
功能描述：
MOSFET TAPE13 PWRMOS
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	PHT11N06	PHILIPS/飞利浦	2024+实力库存	TO-263	50000	只做原厂渠道可追溯货源	询价
深圳市莱克讯科技有限公司	PHT11N06	PHILIPS	2017+	TO-263	26589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市勤思达科技有限公司	PHT11N06	PHILIPS	12+	SOT223	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市华来深电子有限公司	PHT11N06	NXP	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	PHT11N06		23+	N/A	46280	正品授权货源可靠	询价
深圳兆威电子有限公司	PHT11N06	NXP	20+	TO-263	90000	全新原装正品/库存充足	询价
深圳市威尔健半导体有限公司	PHT11N06	MSC/IR	23+	17	69820	终端可以免费供样,支持BOM配单!	询价
深圳市澳亿芯电子科技有限公司	PHT11N06	NXP	10+PBF	SOT-223	3700	普通	询价
深圳市振芯物联科技有限公司	PHT11N06	NXP/恩智浦	22+	TO-223	28600	只做原装正品现货假一赔十一级代理	询价
深圳市河锋鑫科技有限公司	PHT11N06	NXP/恩智浦	2022+	SOT-223	3700	原厂代理终端免费提供样品	询价

更多PHT11N06供应商更新时间2024-5-14 13:39:00

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