ATC100B

Porcelain Superchip Multilayer Capacitors

ATC100B0R1BT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

ATC100B0R2BT500XT

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features •Advancedhighperformancein−packageDoherty •Greaternegativegate−sourcevoltagerangeforimprovedClassCoperation

ATC100B0R2BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R2BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B0R2BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B0R3BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R3BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B0R3BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ATC100B0R3CT500XT

N--Channel Enhancement--Mode Lateral MOSFET

Features AdvancedHighPerformanceIn--PackageDoherty GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems

ATC100B0R4BT500XT

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features •Advancedhighperformancein−packageDoherty •Greaternegativegate−sourcevoltagerangeforimprovedClassCoperation

ATC100B0R5BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B0R5BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R5BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B0R6BT250XT

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2240Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom2000to2200MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformatsin

ATC100B0R6BT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

ATC100B0R6BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ATC100B0R8BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R8BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B100GT500XT

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features Highterminalimpedancesforoptimalbroadbandperformance Advancedhighperformancein--packageDoherty AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions