ATC100B0R2BT500XT

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features •Advancedhighperformancein−packageDoherty •Greaternegativegate−sourcevoltagerangeforimprovedClassCoperation

ATC100B0R2BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R2BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B0R2BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B0R2BT500XT

RF Power Field Effect Transistors

ATC100B0R2BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC100B0R2BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC100B0R2BT500XT

RF LDMOS Wideband Integrated Power Amplifier

ATC100B0R2BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC100B0R2BT500XT

RF Power LDMOS Transistor