ATC100B0R3BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B0R3BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B0R3BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ATC100B0R3BT500XT

RF Power Field Effect Transistors

ATC100B0R3BT500XT

RF Power LDMOS Transistors

ATC100B0R3BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC100B0R3BT500XT

RF LDMOS Integrated Power Amplifier

ATC100B0R3BT500XT

RF Power LDMOS Transistor

ATC100B0R3BT500XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET