零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AOW4S60 | 600V 4A a MOS TM Power Transistor GeneralDescription TheAOW4S60&AOWF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythes | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AOW4S60 | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
Materialspecification | FERROXCUBEFERROXCUBE INC. 飞磁 | FERROXCUBE | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V4AaMOSPowerTransistor | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V4AaMOSPowerTransistor | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
AOW4S60
- 功能描述:
MOSFET N-CH 600V 4A TO262
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
aMOS™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS/万代 |
23+ |
TO-262 |
700000 |
公主请下单 柒号只做原装 |
询价 | ||
AOS |
TO-262 |
20000 |
原装正品 |
询价 | |||
AOS |
20+ |
QR |
65300 |
一级代理/放心购买! |
询价 | ||
AOS |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
AOS |
21+ |
QR |
15500 |
询价 | |||
AOS/万代 |
21+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
AOS |
22+ |
NA |
6878 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Alpha & Omega Semiconductor In |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
Alpha & Omega Semiconductor In |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原装,支持实单 |
询价 | ||
AOS/万代 |
22+ |
TO-262 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 |
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