| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PNPEpitaxialSiliconTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor ProductBrief TheBFP640FislinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCE=4.1VandcurrentsuptoIC=50mA | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor ProductBrief TheBFP640FESDisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.1VandcurrentsuptoIC=50mA. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconGermaniumRFTransistor HiRelNPNSiliconGermaniumRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●HighgainlownoiseRFtransistor ●Highmaximumstablegain:Gms24dBat1.8GHz ●NoisefigureF=0.8dBat1.8GHz NoisefigureF=1.1dBat6GHz ●Hermeticallysealedmicrowavepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconGermaniumRFTransistor HiRelNPNSiliconGermaniumRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●HighgainlownoiseRFtransistor ●Highmaximumstablegain:Gms24dBat1.8GHz ●NoisefigureF=0.8dBat1.8GHz NoisefigureF=1.1dBat6GHz ●Hermeticallysealedmicrowavepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-channelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-CHANNELMOSFETinaTO-252PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN |
详细参数
- 型号：
AG-B640
- 制造商：
Panasonic Industrial Company
- 功能描述：
ADAPTOR ORD FRM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMULET |
QFP80 |
8000 |
正品原装--自家现货-实单可谈 |
询价 | |||
AMULET |
2016+ |
QFP80 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
16+ |
QFP |
950 |
进口原装现货/价格优势! |
询价 | |||
AMULET |
2017+ |
PQFP80 |
54785 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
AMULET |
2020+ |
QFP80 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
AMULET |
22+ |
QFP80 |
5000 |
全新原装现货!价格优惠!可长期 |
询价 | ||
AMULET |
22+ |
QFP80 |
2650 |
原装优势!绝对公司现货 |
询价 | ||
QFP |
950 |
100%原装正品!现货热价热卖!可开17%增值税票! |
询价 | ||||
23+ |
N/A |
46080 |
正品授权货源可靠 |
询价 | |||
AMULET |
2020+ |
QFP80 |
2893 |
公司主营品牌,全新原装现货超低价! |
询价 |
相关规格书
更多- AGB64LV01-QC
- AGB64LV01-QC-E (REV-A)
- AGB69454402
- AGB69454407
- AGB75LC04-BG-E
- AGB-A1-5
- AGB-A2-11
- AG-BP30
- AGC010-301-300
- AGC05HRAS
- AGC-1
- AGC-1/10
- AGC-1/100-R
- AGC1/16
- AGC-1/16-R
- AGC-1/2
- AGC-10
- AGC1000RE
- AGC-1053
- AGC-10A
- AGC10DRAS
- AGC-10-R
- AGC-10RX
- AGC1-1/2
- AGC-132
- AGC-132-R
- AGC-1-34
- AGC-1-3-4-R
- AGC-14
- AGC-1-4-R
- AGC-15
- AGC-15/100-R
- AGC-1-50-R
- AGC-15100
- AGC-15-100-R
- AGC-15A
- AGC-15-R
- AGC-15RX
- AGC-15WX
- AGC-1-6/10-R
- AGC-1-6-10
- AGC-1-8
- AGC-1-8/10-R
- AGC-1-8-10
- AGC-1-810-R
相关库存
更多- AGB64LV01-QC-E
- AGB65854301
- AGB69454404
- AGB69486507
- AGB75LC04-QU-E
- AGB-A1-8
- AG-BP202
- AGC 2.5
- AGC020-301-300
- AGC1
- AGC1/10
- AGC-1/100
- AGC-1/10-R
- AGC-1/16
- AGC1/2
- AGC10
- AGC-10(32V)
- AGC1053
- AGC-1053R
- AGC-10BC
- AGC10DRTH
- AGC-10RLD
- AGC-1-1/2
- AGC-1-1/2BC
- AGC-1-32
- AGC1339
- AGC-1-3-4
- AGC-1-34-R
- AGC-1-4
- AGC-14-R
- AGC-15/100
- AGC-1-50
- AGC-150-R
- AGC-15-100
- AGC-15100-R
- AGC15HRAS
- AGC-15RLD
- AGC-15WW
- AGC-1-6/10
- AGC-1-610
- AGC-18
- AGC-1-8/10
- AGC-1-810
- AGC-1-8-10-R
- AGC-1-8-R
