首页 >WS-1405-TRI>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
ReflectiveSensor | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
InfraredSensorsLineGuide | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际公司 | HONEYWELL-ACC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AVAGO |
2019 |
QFN |
55000 |
专营原装正品现货 |
询价 | ||
AVAGO/安华高 |
2021+ |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
AVAGO/安华高 |
19+ |
QFN |
17580 |
进口原装现货 |
询价 | ||
- |
QFN |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
AVAGO/安华高 |
20+ |
5000 |
原装正品 |
询价 | |||
IC |
23+ |
QFP |
1011 |
全新原装 |
询价 | ||
Essentra |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
AVAGO |
22+ |
QFN |
2800 |
原装现货!可长期供货! |
询价 | ||
AVAGO |
23+ |
QFN |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
AVAGO |
1833+ |
QFN |
146 |
原装现货!天天特价!随时可以货! |
询价 |
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