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HIRF730F

N-CHANNELPOWERMOSFET

HSMC

华昕

HM730

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM730F

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

I730

6A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

IRC730

PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOMDc Components

直流元件直流元件有限公司

IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF730

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF730

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCI

Amphenol ICC

详细参数

  • 型号:

    WFU730

  • 制造商:

    WINSEMI

  • 制造商全称:

    WINSEMI

  • 功能描述:

    Silicon N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
WINSEMI
2019+
TO-251
87500
稳先微WS原装正品假一赔十
询价
vishay
2023+
TO-251
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
WISDOM
TO-251
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
WINSEMI
23+
IPAK
33500
全新原装真实库存含13点增值税票!
询价
WINSEMI
23+
IPAK
10000
公司只做原装正品
询价
WINSEMI
IPAK
22+
6000
十年配单,只做原装
询价
WINSEMI
23+
IPAK
6000
原装正品,支持实单
询价
WINSEMI
22+
IPAK
25000
只做原装进口现货,专注配单
询价
WINSEMI
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ST(先科)
23+
NA
20
快恢复整流器
询价
更多WFU730供应商 更新时间2024-5-20 9:20:00