| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel100-V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel100-V(D-S)175째CMOSFET FEATURES •TrenchFET®PowerMOSFET •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMMOSFETISOPLUS220 HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Integrated Circuits Division | IXYS | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-247 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
22+ |
TO-247 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
TO-247 |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
TO-247 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST/意法 |
2020+ |
TO-247 |
39619 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
ST |
22+ |
TO-247 |
66900 |
原厂原装现货 |
询价 | ||
ST |
2017+ |
TO247 |
45248 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ST |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
询价 | ||
ST |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
ST |
2016+ |
TO247 |
5562 |
只做进口原装现货!或订货!假一赔十! |
询价 |
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