IXFC80N10中文资料PDF规格书
IXFC80N10规格书详情
HiPerFET™ MOSFET ISOPLUS220™
Electrically Isolated Back Surface
Features
● Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
● Low drain to tab capacitance(<35pF)
● Low RDS (on)
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Fast intrinsic Rectifier
Applications
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control
Advantages
● Easy assembly: no screws or isolation foils required
● Space savings
● High power density
● Low collector capacitance to ground (low EMI)
产品属性
- 型号:
IXFC80N10
- 功能描述:
MOSFET 100 Amps 100V 0.0125 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS220 |
6000 |
原装正品,支持实单 |
询价 | ||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
询价 | ||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IXYS |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
23+ |
TO-220 |
60603 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IXYS |
23+ |
ISOPLUS22 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
22+ |
ISOPLUS220? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
2022+ |
ISOPLUS220? |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS/艾赛斯 |
22+ |
ISOPLUS220 |
25000 |
只做原装进口现货,专注配单 |
询价 |