首页 >W25Q16JVZPJQ>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

P25Q16L-SUH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-SUH-KY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-IW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-IY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-KR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-KT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-TSH-KY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-IW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-IY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-KR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-KT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UWH-KY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UXH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q16L-UXH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

产品属性

  • 产品编号:

    W25Q16JVZPJQ

  • 制造商:

    Winbond Electronics

  • 类别:

    集成电路(IC) > 存储器

  • 系列:

    SpiFlash®

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    16Mb(2M x 8)

  • 存储器接口:

    SPI - 四 I/O

  • 写周期时间 - 字,页:

    3ms

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 105°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-WDFN 裸露焊盘

  • 供应商器件封装:

    8-WSON(6x5)

  • 描述:

    IC FLASH 16MBIT SPI/QUAD 8WSON

供应商型号品牌批号封装库存备注价格
Winbond Electronics
21+
8-WDFN 裸露焊盘
15000
正规渠道/品质保证/原装正品现货
询价
Winbond Electronics
24+
8-WDFN 裸露焊盘
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
Winbond
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
WINBOND
2021+
WLCSP-8
12982
只做全新原装接受订货
询价
WINBOND
23+
SMD
20
原装正品实单可谈 库存现货
询价
WINBOND(华邦)
2117+
WLCSP-8(1.56x2.16)
315000
4500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
WINBOND(华邦)
23+
WLCSP8(1.6x2.2)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
23+
N/A
58600
一级代理放心采购
询价
WINBOND/华邦
20+
SMD
880000
明嘉莱只做原装正品现货
询价
WINBOND(华邦)
1921+
SOIC-8
3575
向鸿仓库现货,优势绝对的原装!
询价
更多W25Q16JVZPJQ供应商 更新时间2024-6-15 10:34:00