| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnologygeneration2 •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifieda | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnologygeneration2 •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifieda | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技 | Vishay | ||
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技 | Vishay | ||
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技 | Vishay | ||
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnologygeneration2 •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifieda | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakM3of260°C •AEC-Q101qualifiedavailable: | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技 | Vishay | ||
Superior Peak Surge Current Ratings in Small Disc Sizes Description TheLittelfuseLVUltraMOV™Seriesoflowvoltage,highsurgecurrent,radialleadedvaristorsprovidesanidealcircuitprotectionsolutionforlowerDCvoltageapplicationsbyofferinghighersurgeratingsthaneverbeforeavailableinsuchsmalldiscs. Features •Breakthroughin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | Littelfuse | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusei | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
V20
- 制造商：
ZCOMM
- 制造商全称：
ZCOMM
- 功能描述：
LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZCOMM |
2018+ |
SMD |
1680 |
ZCOMM专营品牌进口原装现货假一赔十 |
询价 | ||
Z-Communications |
20+ |
50 |
Z-Comm 代理,专业销售VCO, |
询价 | |||
Z-COMM |
24+ |
SMD |
3200 |
进口原装假一赔百 |
询价 | ||
Z-COMM |
QFN |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
Z-COMM |
原厂封装 |
668 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Z-COMM |
23+ |
6000 |
全新原装 |
询价 | |||
z-comm |
20 |
询价 | |||||
TFK |
05+ |
原厂原装 |
71 |
只做全新原装真实现货供应 |
询价 | ||
LITTELFUSE |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Littelfuse(美国力特) |
21+ |
径向引线 |
4000 |
中国航天工业部战略合作伙伴行业领导者 |
询价 |
相关规格书
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- V200ML01
- V200RA16X2749
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- V20100C_09
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相关库存
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- V20100SG-E3/4W
- V20100SGHM3/4W
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- V2010A1
- V2010A3
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- V20120C-M3/4W
- V20120S
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- V20120SHM3/4W
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- V2015
- V20150C_11
- V20150C-E3/4W
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- V20150C-M3-4W
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- V20150SG
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- V20150SG-M3/4W
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- V201HA32
