| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR FEATURES •FrequencyRange:195-305MHz •TuningVoltage:0-15Vdc •MINI-14H-StylePackage APPLICATIONS •SatelliteModems •MobileRadios •Earthstations | ZCOMM Z-Communications, Inc | ZCOMM | ||
Voltage-Controlled Oscillator Surface Mount Module Voltage-ControlledOscillatorSurfaceMountModule Applications •SatelliteModems •MobileRadios •Earthstations | ZCOMM Z-Communications, Inc | ZCOMM | ||
VOLTAGE CONTROLLED OSCILLATOR FEATURES •FrequencyRange:200-300MHz •TuningVoltage:0-15Vdc •MINI-14H-StylePackage APPLICATIONS •SatelliteModems •MobileRadios •Earthstations | ZCOMM Z-Communications, Inc | ZCOMM | ||
Varistor Products - Low Profile Description TheRASeriestransientsurgesuppressorsarevaristors(MOVs)suppliedinalow-profileboxthatfeaturesapreciseseatingplanetoincreasemechanicalstabilityforsecurecircuit-boardmounting.Thisfeaturemakesthesedevicessuitableforindustrialapplicationscriticaltovibr | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
Varistor Products - Low Profile Description TheRASeriestransientsurgesuppressorsarevaristors(MOVs)suppliedinalow-profileboxthatfeaturesapreciseseatingplanetoincreasemechanicalstabilityforsecurecircuit-boardmounting.Thisfeaturemakesthesedevicessuitableforindustrialapplicationscriticaltovibr | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
Varistor Products - Low Profile Description TheRASeriestransientsurgesuppressorsarevaristors(MOVs)suppliedinalow-profileboxthatfeaturesapreciseseatingplanetoincreasemechanicalstabilityforsecurecircuit-boardmounting.Thisfeaturemakesthesedevicessuitableforindustrialapplicationscriticaltovibr | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
AIOT Wi-Fi/Bluetooth Combo Module 2.Features CPU CMOSsingle-chipfully-integratedPMU,CODEC,RF,BB,MCUandAPsubsystem 300MHzARMCortex-M33Stardual-coreMCUsubsystem 1GHzARMCortex-A7dual-coreAPsubsystemwithNEON. Shared2MBSRAM,on-chipPSRAMandon-chipNORflashNote1 SupportTrustZoneandsecure | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Schottky technology UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106 •Com | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106 •Com | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJES | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
V20
- 制造商：
ZCOMM
- 制造商全称：
ZCOMM
- 功能描述：
LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZCOMM |
2018+ |
SMD |
1680 |
ZCOMM专营品牌进口原装现货假一赔十 |
询价 | ||
Z-Communications |
20+ |
50 |
Z-Comm 代理,专业销售VCO, |
询价 | |||
Z-COMM |
22+ |
SMD |
3200 |
进口原装假一赔百 |
询价 | ||
Z-COMM |
QFN |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
Z-COMM |
原厂封装 |
668 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Z-COMM |
23+ |
6000 |
全新原装 |
询价 | |||
z-comm |
20 |
询价 | |||||
TFK |
05+ |
原厂原装 |
71 |
只做全新原装真实现货供应 |
询价 | ||
LITTELFUSE |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Littelfuse(美国力特) |
21+ |
径向引线 |
4000 |
中国航天工业部战略合作伙伴行业领导者 |
询价 |
相关规格书
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