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UPD43256B-B

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXX

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXXX

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXX

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

D43256BGU

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256A

32,768X8-BITSTATICCMOSRAM

Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-A

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXX

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-X

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-X

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
NEC
22+
DIP-28
4650
询价
NEC
20+/21+
DIP28
7140
全新原装现货优势产品
询价
NEC
2023+
DIP-28
50000
原装现货
询价
DIP
21
询价
23+
DIP-28
22
现货或发货一天
询价
NEC
23+
SSOP
6000
公司十几年如一日,只做原装正品,优势渠道保证每一片
询价
NEC
05+
原厂原装
225
只做全新原装真实现货供应
询价
NEC
22+23+
DIP
38934
绝对原装正品全新进口深圳现货
询价
NEC
21+
DIP
6000
绝对原裝现货
询价
NEC
2023+
DIP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多UPD43256B-B供应商 更新时间2024-5-17 16:03:00