| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheµPA810TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Fla | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheµPA810Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniMoldPackageA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheµPA810TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Fla | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON RF TWIN TRANSISTOR NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC5006) FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Flat-lead6-pinthin-typeultrasuper | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION TheµPA810TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •Fla | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION TheUPA810TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfor | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheµPA810Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniMoldPackageA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD TheµPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA •HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA •ASmallMiniMold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD TheµPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA •HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA •ASmallMiniMold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheµPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA •HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA •ASmallMiniMold | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD TheµPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA •HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA •ASmallMiniMold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheµPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA •HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA •ASmallMiniMold | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TheµPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniM | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TheµPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniM | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICON TRANSISTOR HIGH-FREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC4227)SMALLMINIMOLD FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniMoldPackageAdopted | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TheµPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •ASmallMiniM | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD µPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD µPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICON TRANSISTOR NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC4570)SMALLMINIMOLD FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) •ASurfaceMountingPackageAdopted •Built-in2Transisto | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD µPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
UPA81
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
13+ |
SOT363 |
180000 |
特价热销现货库存 |
询价 | ||
NEC |
16+ |
SOT26 |
50000 |
绝对原装进口现货可开17%增值税发票 |
询价 | ||
NEC |
2017+ |
SOT-363SC |
56787 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
NEC |
22+ |
SOT23-6 |
2500 |
强调现货,随时查询! |
询价 | ||
NEC |
07+/08+ |
SOT-363 |
7500 |
询价 | |||
NEC |
23+ |
SOT-363 |
7750 |
全新原装优势 |
询价 | ||
CEL |
17+ |
原厂原封 |
1000 |
原装正品 |
询价 | ||
NEC |
17+ |
SOT-363 |
6200 |
100%原装正品现货 |
询价 | ||
NEC |
2020+ |
SOT363 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
NEC |
1742+ |
SOT363 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 |
相关规格书
更多- UPA810T-A
- UPA810T-T1-A
- UPB(BULK)
- UPB1511TB
- UPB1A101MDD
- UPB1A221MED
- UPB1A222MHD1TO
- UPB1A332MHD
- UPB1A471MPD1TD
- UPB1C102MPD
- UPB1C222MHD
- UPB1C331MPD1TD
- UPB1E101MED
- UPB1E102MHD
- UPB1E470MDD
- UPB1H100MDD
- UPB1H100MDD1TD
- UPB1H101MPD1TD
- UPB1H220MDD1TA
- UPB1H220MDD1TD
- UPB1H221MPD1AA
- UPB1H330MED
- UPB1H3R3MDD
- UPB1H470MED
- UPB1H4R7MDD
- UPB1HR47MDD1TD
- UPB1V102MHD
- UPB1V330MDD
- UPB1V331MPD
- UPB1V470MED
- UPB2C101MHD1TN
- UPB2C220MPD1TD
- UPB2C331MHD
- UPB2C470MHD1TO
- UPB2C680MHD
- UPB2C681MRD
- UPB2C821MRD
- UPB2D101MHD1TN
- UPB2D220MPD1TD
- UPB2D391MRD
- UPB2D470MHD1TO
- UPB2D561MRD6
- UPB2D680MHD1TO
- UPB2E101MHD1TN
- UPB2E181MHD
相关库存
更多- UPA810T-T1
- UPAP-1-1RE-51-10.0A-D
- UPB1507GV
- UPB160808T-101Y-N
- UPB1A101MDD1TD
- UPB1A221MED1TD
- UPB1A331MPD1TD
- UPB1A332MHD1TO
- UPB1C101MED
- UPB1C221MPD
- UPB1C222MHD1TO
- UPB1C471MPD1TD
- UPB1E101MED1TD
- UPB1E221MPD
- UPB1H010MDD
- UPB1H100MDD
- UPB1H101MPD
- UPB1H220MDD
- UPB1H220MDD1TA
- UPB1H221MPD
- UPB1H221MPD1TD
- UPB1H331MPD1TD
- UPB1H3R3MDD1TD
- UPB1H471MHD
- UPB1H4R7MDD1TD
- UPB1V101MPD
- UPB1V102MHD1TO
- UPB1V330MDD1TD
- UPB1V331MPD1TD
- UPB1V471MPD
- UPB2C220MPD
- UPB2C330MPD1TD
- UPB2C391MHD
- UPB2C471MHD
- UPB2C680MHD1TO
- UPB2C681MRD6
- UPB2D101MHD
- UPB2D151MHD1TN
- UPB2D221MHD
- UPB2D470MHD
- UPB2D561MRD
- UPB2D680MHD
- UPB2D681MRD
- UPB2E151MHD
- UPB2E220MHD
