UPA802T-T1数据手册供应价格瑞萨RENESAS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
UPA802T-T1	文件：53.04 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD TheµPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain\|S21e\|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •AMiniMoldPackageAdopted	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
UPA802T-T1	文件：216.28 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR TheµPA802Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES •LowNoiseNF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA •HighGain\|S21e\|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA •AMiniMoldPackageAdopted	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
UPA802T-T1-A	文件：236.48 Kbytes Page：10 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR	CEL California Eastern Laboratories	CEL
UPA802T-T1-A	文件：606.19 Kbytes Page：9 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR	CEL California Eastern Laboratories	CEL
UPA802T-T1-A	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：6-TSSOP，SC-88，SOT-363 类别：分立半导体产品晶体管 - 双极（BJT）- 射频描述：RF TRANS 2 NPN 10V 7GHZ SOT363	CEL California Eastern Laboratories	CEL

型号：
UPA802T-T1
制造商：
NEC
制造商全称：
NEC
功能描述：
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

更多UPA802T-T1供应商更新时间2024-5-1 14:14:00