首页 >UPA2731UT1A>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UPA2731UT1A | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2731UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.3mΩMAX.(VGS=−10V,ID=−22A) RDS(on)2=6.4mΩMAX.(VGS=−4. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
UPA2731UT1A | P-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2731UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.3mΩMAX.(VGS=−10V,ID=−22A) RDS(on)2=6.4mΩMAX.(VGS=−4. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheμPA2731UT1AisP-channelMOSFieldEffectTransistordesigned forpowermanagementapplicationsofnotebookcomputersandLi-ion batteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=3.3mΩMAX.(VGS=−10V,ID=−22A) RDS(on)2=6.4mΩMAX.(VGS=−4. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
UPA2731UT1A
- 制造商：
Renesas Electronics Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
19+ |
QFN8 |
12000 |
询价 | |||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
QFN8 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
N |
21+ |
QFN8 |
6000 |
绝对原裝现货 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
QFN8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
22+ |
QFN8 |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
NEC |
22+ |
QFN8 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
QFN-8.贴片 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBSEMI |
23+ |
QFN8 |
10800 |
只做原装 欢迎咨询 |
询价 | ||
VBSEMI |
19+ |
QFN8 |
29600 |
绝对原装现货,价格优势! |
询价 |
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