| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
ReflectiveSensor | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际公司 | HONEYWELL-ACC | ||
InfraredSensorsLineGuide | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AT&T |
23+ |
SOP |
7000 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
LUCENT |
15+ |
SOJ28 |
200 |
全新原装正品现货 |
询价 | ||
AT&T |
22+ |
SOP |
6868 |
原装现货,可开13%税票 |
询价 | ||
AT&T |
23+ |
SOP28 |
2000 |
全新原装 |
询价 | ||
LUCENT |
2020+ |
SOJ28 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
AT&T |
1904+ |
SOP28 |
3000 |
自家现货!原装特价供货!一片起卖! |
询价 | ||
AT&T |
20+ |
SOP28 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
AT&T |
2023+ |
SOP28 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
AT&T |
21+ |
SOP28 |
35400 |
全新原装现货/假一罚百! |
询价 | ||
FREESCALE |
23+ |
QFP32 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 |
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