首页 >TPB50R250C>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TPB50R250C | 500V Super-Junction Power MOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | |
TPB50R250C | 500V Super-Junction Power MOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | |
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤250mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMosPowerTransistor Features •LowestfigureofmeritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Ha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤250mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
紫光微 |
21+ |
TO-263 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
MDD |
21+ |
DO-27S |
12588 |
原装正品,价格优势 |
询价 | ||
TI |
1728+ |
DSBGA-16 |
6528 |
只做进口原装正品假一赔十! |
询价 | ||
TI/德州仪器 |
22+ |
DSBGA-16 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI/德州仪器 |
22+ |
DSBGA-16 |
50000 |
只做正品原装,假一罚十,欢迎咨询 |
询价 | ||
TI/德州仪器 |
22+ |
DSBGA-16 |
21000 |
原厂原包装。假一罚十。可开13%增值税发票。 |
询价 | ||
TI/德州仪器 |
20+ |
BGA |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
22+ |
DIP |
66900 |
原厂原装现货 |
询价 | ||
ST |
23+ |
DIP |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
DIP |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |
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