首页 >IPI50R250CP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPI50R250CP | CoolMOS Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPI50R250CP | isc N-Channel MOSFET Transistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤250mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMosPowerTransistor Features •LowestfigureofmeritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Ha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.25Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤250mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&softswitchingSMPStopologies • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC | ||
500VSuper-JunctionPowerMOSFET | WUMCWuxi Unigroup Microelectronics Company 紫光微无锡紫光微电子有限公司 | WUMC |
详细参数
- 型号：
IPI50R250CP
- 功能描述：
MOSFET N-CH 500V 13A TO262-3
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
CoolMOS™
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2024+实力库存 |
TO-262 |
15000 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-262 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
Infineon |
17+ |
TO220-3 |
17900 |
MOSFET管 |
询价 | ||
Infineon |
18+ |
NA |
3049 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINEON |
23+ |
TO-262 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
20+ |
TO-262 |
90000 |
全新原装正品/库存充足 |
询价 | ||
INFINEON |
2023+ |
TO-262 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
INFINEON |
21+ |
TO-262 |
35200 |
一级代理/放心采购 |
询价 | ||
INFINEON/英飞凌 |
22+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
INFINEON |
09+PBF |
TO-262 |
15000 |
普通 |
询价 |
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