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TN0104

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN0104

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

TN0104N3

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN0104N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

TN0104N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN0104ND

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN0104ANVAANN-GN00

包装:托盘 类别:光电器件 显示器模块 - LCD,OLED,图形 描述:1.04, 176X176, MEMORY IN PIXEL

Kyocera International, Inc.

Kyocera International, Inc.

Kyocera International, Inc.

0104

IECConnectorC19,Rewireable,Straight

Description ApplianceInlet, -Werecommendfornewapplicationsthenewtype6136

SCHURTERSchurter Inc.

硕特硕特集团

0104

IECApplianceInletC20withFilter,FrontorRearSideMounting

SCHURTERSchurter Inc.

硕特硕特集团

0104-SS

CAPTIVEPANELSCREWSTYLE1

RAF

MW Industries Inc.

0104U

IECConnectorC19,Rewireable,Straight

SCHURTERSchurter Inc.

硕特硕特集团

0104U

IECConnectorC19,Rewireable,Straight

SCHURTERSchurter Inc.

硕特硕特集团

0104U

IECConnectorC19,Rewireable,Straight

SCHURTERSchurter Inc.

硕特硕特集团

A0104X

ILLUMINATEDORNON-ILLUMINATEDPUSHBUTTONSWITCHESPanelcut-out횠16(.630)

etc2List of Unclassifed Manufacturers

etc2未分类制造商

A0104Y

ILLUMINATEDORNON-ILLUMINATEDPUSHBUTTONSWITCHESPanelcut-out횠16(.630)

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ABE0104

LowEMISpreadSpectrumMultiplierClock

DESCRIPTION TheABE0101/02/04/06areSpreadSpectrumClockGeneratorsdesignedforthepurposeofreducingEMIinhigh-speeddigitalsystems.Anyoutputfrequencyfrom10to180MHzcanbeselectedbyprogramming6multipliermodes.Thedeviceisdesignedtooperatefromacrystalorreferenceclo

ABRACONAbracon Corporation

阿布雷肯

ABE0104SC

LowEMISpreadSpectrumMultiplierClock

DESCRIPTION TheABE0101/02/04/06areSpreadSpectrumClockGeneratorsdesignedforthepurposeofreducingEMIinhigh-speeddigitalsystems.Anyoutputfrequencyfrom10to180MHzcanbeselectedbyprogramming6multipliermodes.Thedeviceisdesignedtooperatefromacrystalorreferenceclo

ABRACONAbracon Corporation

阿布雷肯

ABE0104SC-T

LowEMISpreadSpectrumMultiplierClock

DESCRIPTION TheABE0101/02/04/06areSpreadSpectrumClockGeneratorsdesignedforthepurposeofreducingEMIinhigh-speeddigitalsystems.Anyoutputfrequencyfrom10to180MHzcanbeselectedbyprogramming6multipliermodes.Thedeviceisdesignedtooperatefromacrystalorreferenceclo

ABRACONAbracon Corporation

阿布雷肯

ADC0104

DCPOWERJACKSPCBOARDANDPANELMOUNT

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

BES0104

InductiveSensors

BES516-372-G-E4-C-PU-05 Basicfeatures Approval/ConformitycULus CE WEEE BasicstandardIEC60947-5-2

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

详细参数

  • 型号:

    TN0104

  • 功能描述:

    MOSFET 40V 1.8Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TN0104
1
1
询价
Supertex
22+
SOT-89
4897
绝对原装!现货热卖!
询价
SUP
05+
原厂原装
5082
只做全新原装真实现货供应
询价
SUTEX
12+
SOT89
15000
全新原装,绝对正品,公司现货供应。
询价
(空白)
4000
现货供应
询价
SUPERTEX
17+
SOT-89-3
4820
只做原装正品
询价
SUPERTEX
24+
TO-92
5000
只做原装公司现货
询价
Supertex
2020+
SOT-89
800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SUPERTEX
37
全新原装 货期两周
询价
SUPERTEX
18+
SOT-89
85600
保证进口原装可开17%增值税发票
询价
更多TN0104供应商 更新时间2024-6-6 13:56:00