TGF

包装：散装 类别：电路保护 电气专用保险丝 描述：BUSS HEAT LIMITER

Eaton - Bussmann Electrical Division

TGF1350

Discrete MESFET

Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing

TGF1350-SCC

Discrete MESFET

Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing

TGF2021-01

DC-12 GHz Discrete Power pHEMT

ProductDescription TheTriQuintTGF2021-01isadiscrete1mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-01isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-01typicallyprovides>30dBmofsaturatedoutputpowerwithpowergainof11dB.Th

TGF2021-02

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-02isadiscrete2mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-02isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-02typicallyprovides>33dBmofsaturatedoutputpowerwithpowergainof11dB.T

TGF2021-04

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-04isadiscrete4mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-04isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-04typicallyprovides>36dBmofsaturatedoutputpowerwithpowergainof11dB.Th

TGF2021-08

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-08isadiscrete8mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-08isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-08typicallyprovides>39dBmofsaturatedoutputpowerwithpowergainof11dB.The

TGF2022-12

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-12isadiscrete1.2mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-12isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-12typicallyprovides>31dBmofsaturatedoutputpowerwithpowergainof13dB.

TGF2022-24

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-24isadiscrete2.4mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-24isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-24typicallyprovides>34dBmofsaturatedoutputpowerwithpowergainof13dB.

TGF2022-48

DC - 20 GHz Discrete power pHEMT

• ProductDescription TheTriQuintTGF2022-48isadiscrete4.8mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-48isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-48typicallyprovides>37dBmofsaturatedoutputpowerwithpowergainof13d

TGF2022-60

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-60isadiscrete6.0mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-60isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-60typicallyprovides>38dBmofsaturatedoutputpowerwithpowergainof12dB.

TGF2023-2-05

25 Watt Discrete Power GaN on SiC HEMT

ProductFeatures FrequencyRange:DC-18GHz 44.3dBmNominalPSATat6GHz 64.4MaximumPAEat6GHz 17.6dBLinearGainat6GHz Bias:VD=12-32V,IDQ=100-250mA Technology:QGaN25onSiC ChipDimensions:0.82x1.44x0.10mm

TGF2819-FL

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

TGF2819-FLEVB03

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

TGF2819-FLPCB4B01

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

TGF3020-SM

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

TGF3020-SM_V01

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

TGF3020-SMEVB01

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

TGF3020-SMEVB02

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

TGF4112

12 mm Discrete HFET

12mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof6.0Wattsat2.3GHz •NominalPAEof54.5at2.3GHz •NominalGainof12.7dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm)