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TGF2021-02中文资料PDF规格书

TGF2021-02
厂商型号

TGF2021-02

功能描述

DC - 12 GHz Discrete power pHEMT

文件大小

125.55 Kbytes

页面数量

8

生产厂商 TriQuint Semiconductor
企业简称

TriQuint

中文名称

TriQuint Semiconductor官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-16 11:36:00

TGF2021-02规格书详情

Product Description

The TriQuint TGF2021-02 is a discrete 2 mm pHEMT which operates from DC- 12 GHz. The TGF2021-02 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.

The TGF2021-02 typically provides > 33 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59 which makes the TGF2021-02 appropriate for high efficiency applications.

The TGF2021-02 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.

The TGF2021-02 has a protective surface passivation layer providing environmental robustness.

Key Features and Performance

• Frequency Range: DC - 12 GHz

• > 33 dBm Nominal Psat

• 59 Maximum PAE

• 11 dB Nominal Power Gain

• Suitable for high reliability applications

• 2mm x 0.35 m Power pHEMT

• Nominal Bias Vd = 8-12V, Idq = 150-250mA

(Under RF Drive, Id rises from 150mA to 480mA)

• Chip Dimensions: 0.57 x 0. 79 x 0.10 mm

(0.022 x 0.031 x 0.004 in)

Primary Applications

• Point-to-point Radio

• High-reliability space

• Military

• Base Stations

• Broadband Wireless Applications

产品属性

  • 型号:

    TGF2021-02

  • 功能描述:

    射频GaAs晶体管 DC-12GHz 2mm Pwr pHEMT(0.35um)

  • RoHS:

  • 制造商:

    TriQuint Semiconductor

  • 技术类型:

    pHEMT

  • 频率:

    500 MHz to 3 GHz

  • 增益:

    10 dB

  • 噪声系数:

    正向跨导

  • gFS(最大值/最小值):

    4 S 漏源电压

  • 闸/源击穿电压:

    - 8 V

  • 漏极连续电流:

    3 A

  • 最大工作温度:

    + 150 C

  • 功率耗散:

    10 W

供应商 型号 品牌 批号 封装 库存 备注 价格
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