| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
90A竊?0VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
30VN-ChannelPower Features VDS=30V,ID=90A RDS(ON),3.8mΩ(Typ)@VGS=10V RDS(ON),6.4mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances | UMWUMW 友台友台半导体 | UMW | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
OptiMOS??Power-MOSFET Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 汇利达广东汇利达半导体有限公司 | HUILIDA | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighdensitycelldesignforultralowRdson | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TF(拓锋) |
23+ |
TO252 |
6000 |
询价 | |||
TF |
21+ |
SOP-10 |
11000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
TF |
24+25+/26+27+ |
SOP-16 |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
JX |
2016+ |
DIP-16 |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
询价 | ||
HALO |
2022+ |
DIP12 |
90000 |
原厂原盒现货,年底清仓大特价!送 |
询价 | ||
JXD |
18+ |
DIP12 |
85680 |
保证进口原装可开17%增值税发票 |
询价 | ||
JXD |
1736+ |
DIP16 |
15238 |
原厂优势渠道 |
询价 | ||
JXD |
20+ |
DIP12 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
JXD |
23+ |
DIP |
24800 |
全新原装现货,价格优势 |
询价 | ||
JXD |
21+ |
DIP12 |
19000 |
只做正品原装现货 |
询价 |
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