| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BR100N03 | N-CHANNEL MOSFET in a TO-220 Plastic Package | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | |
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
90A竊?0VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
30VN-ChannelPower Features VDS=30V,ID=90A RDS(ON),3.8mΩ(Typ)@VGS=10V RDS(ON),6.4mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances | UMWUMW 友台友台半导体 | UMW | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
OptiMOS??Power-MOSFET Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 汇利达广东汇利达半导体有限公司 | HUILIDA | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighdensitycelldesignforultralowRdson | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BLUE ROCKET(蓝箭) |
2112+ |
TO-220 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
BLUE ROCKET(蓝箭) |
20+ |
TO-220 |
50 |
询价 | |||
进口原装 |
23+ |
CAN4 |
1685 |
优势库存 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
BR-10 |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
BYTES |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
PH |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
PH |
2021+ |
CAN |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
GeneSiC |
1935+ |
N/A |
55 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
GENESIC |
1809+ |
BR-10 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
GeneSiC |
22+ |
NA |
55 |
加我QQ或微信咨询更多详细信息, |
询价 |
