| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
T1/E1ExtendedTemperatureRangeSMDSingleTransformers | FILTRAN FILTRAN Group | FILTRAN | ||
NavigationControllerUnit(NCU) | SONARDYNESonardyne sound in depth Sonardyne sound in depth | SONARDYNE | ||
Snap-actingMomentaryPushbuttonSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
RadialLeadThermalCutoff | NTE NTE Electronics, Inc | NTE | ||
Snap-actingMomentaryPushbuttonSwitches Features/Benefits •Positivetactilefeel •Multi-positionsavailable •Widevarietyofterminationoptions •Epoxyterminalsealcompatiblewithbottomwashcleaning •RoHScompliantmodelsavailable TypicalApplications •Instrumentation •Computerperipherals •Telecommunicationsequ | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
BusBarWire,#20SolTC ProductDescription BusBarWire,20AWG(Solid)TinnedCopper,QQ-W-343G | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Track-on-GlassLaserSensor | Pixart原相科技股份有限公司 原相科技 | Pixart | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
3.3V/5VECL2-InputDifferentialXOR/XNOR Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features •250psTypicalPropagationDelay •MaximumFrequency>3GHzTypical •PECLModeOpera | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
8-LineEMIFilterwithIntegratedESDProtection GeneralDescription TheAOZ8020isan8-linedeviceintegratingEMIfilteringwithESDprotectionforeachline.ItisdesignedtosuppressunwantedEMI/RFIsignalsandprovideelectrostaticdischarge(ESD)protectioninportableelectronicequipment.Thisstate-of-the-artdeviceutilizesAOSl | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILERGY |
2016+ |
DFN33-12 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SILERGY |
2016+ |
DFN33-1 |
6528 |
只做原装正品现货!或订货 |
询价 | ||
SILERGY |
2020+ |
DFN33-1 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SILERGY |
21+ |
DFN33-12 |
65200 |
一级代理/放心采购 |
询价 | ||
SILERGY/矽力杰 |
2048+ |
DFN33-12 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SILERGY |
22+ |
DFN33-12 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
SILERGY/矽力杰 |
23+ |
DFN33-12 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILERGY/矽力杰 |
2022 |
DFN33-12 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
SILERGY/矽力杰 |
24+23+ |
DFN33-12 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
SILERGY |
DFN33-12 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |
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