首页 >APT8020JLL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
APT8020JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | ADPOW Advanced Power Technology | ADPOW | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
T1/E1ExtendedTemperatureRangeSMDSingleTransformers | FILTRAN FILTRAN Group | FILTRAN | ||
NavigationControllerUnit(NCU) | SONARDYNESonardyne sound in depth Sonardyne sound in depth | SONARDYNE | ||
Snap-actingMomentaryPushbuttonSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
RadialLeadThermalCutoff | NTE NTE Electronics, Inc | NTE | ||
Snap-actingMomentaryPushbuttonSwitches Features/Benefits •Positivetactilefeel •Multi-positionsavailable •Widevarietyofterminationoptions •Epoxyterminalsealcompatiblewithbottomwashcleaning •RoHScompliantmodelsavailable TypicalApplications •Instrumentation •Computerperipherals •Telecommunicationsequ | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
BusBarWire,#20SolTC ProductDescription BusBarWire,20AWG(Solid)TinnedCopper,QQ-W-343G | BELDEN Belden Inc. | BELDEN | ||
Track-on-GlassLaserSensor | Pixart原相科技股份有限公司 原相科技 | Pixart | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
3.3V/5VECL2-InputDifferentialXOR/XNOR Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features •250psTypicalPropagationDelay •MaximumFrequency>3GHzTypical •PECLModeOpera | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
8-LineEMIFilterwithIntegratedESDProtection GeneralDescription TheAOZ8020isan8-linedeviceintegratingEMIfilteringwithESDprotectionforeachline.ItisdesignedtosuppressunwantedEMI/RFIsignalsandprovideelectrostaticdischarge(ESD)protectioninportableelectronicequipment.Thisstate-of-the-artdeviceutilizesAOSl | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW |
详细参数
- 型号：
APT8020JLL
- 功能描述：
MOSFET N-CH 800V 33A SOT-227
- RoHS：
是
- 类别：
半导体模块 >> FET
- 系列：
POWER MOS 7®
- 标准包装：
10
- 系列：
*
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology |
23+ |
ISOTOP? |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
MICROCHIP(美国微芯) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
MicrosemiPowerProductsGr |
23+ |
MOSFETN-CH800V33ASOT-227 |
1698 |
专业代理销售半导体模块,能提供更多数量 |
询价 | ||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
MicrosemiCorporation |
19+ |
SOT-227-4 |
56800 |
miniBLOC |
询价 | ||
Microch |
18+ |
NA |
9640 |
专业一站OEM,省时省力少花冤枉钱!专业可靠! |
询价 | ||
MICROSEMI |
638 |
原装正品 |
询价 | ||||
APT |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
Microsemi |
1942+ |
N/A |
98 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 |
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