| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
T1/E1ExtendedTemperatureRangeSMDSingleTransformers | FILTRAN FILTRAN Group | FILTRAN | ||
NavigationControllerUnit(NCU) | SONARDYNESonardyne sound in depth Sonardyne sound in depth | SONARDYNE | ||
Snap-actingMomentaryPushbuttonSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
RadialLeadThermalCutoff | NTE NTE Electronics, Inc | NTE | ||
Snap-actingMomentaryPushbuttonSwitches Features/Benefits •Positivetactilefeel •Multi-positionsavailable •Widevarietyofterminationoptions •Epoxyterminalsealcompatiblewithbottomwashcleaning •RoHScompliantmodelsavailable TypicalApplications •Instrumentation •Computerperipherals •Telecommunicationsequ | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
BusBarWire,#20SolTC ProductDescription BusBarWire,20AWG(Solid)TinnedCopper,QQ-W-343G | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Track-on-GlassLaserSensor | Pixart原相科技股份有限公司 原相科技 | Pixart | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
TerminationofECLLogicDeviceswithEF(EmitterFollower)OUTPUTStructure | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
3.3V/5VECL2-InputDifferentialXOR/XNOR Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features •250psTypicalPropagationDelay •MaximumFrequency>3GHzTypical •PECLModeOpera | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
8-LineEMIFilterwithIntegratedESDProtection GeneralDescription TheAOZ8020isan8-linedeviceintegratingEMIfilteringwithESDprotectionforeachline.ItisdesignedtosuppressunwantedEMI/RFIsignalsandprovideelectrostaticdischarge(ESD)protectioninportableelectronicequipment.Thisstate-of-the-artdeviceutilizesAOSl | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装SY |
2016+ |
DFN33-12 |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
询价 | ||
SILERGY |
20+ |
NA |
90000 |
原装正品现货/价格优势 |
询价 | ||
21+ |
DFN3X3-12 |
8866666 |
原装现货 |
询价 | |||
SILERGY/矽力杰 |
21+ |
DFN33-12 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
SY |
DFN12 |
68552 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Silergy |
23+24 |
SOT-23 |
29580 |
原装正品.原盘原标,提供BOM一站式配单 |
询价 | ||
SY |
2316+ |
DFN12 |
34960 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
SILERGY |
2016+ |
DFN33-12 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
矽力杰 |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
12+ |
DFN33-12 |
6000 |
绝对原装自己现货 |
询价 |
相关规格书
更多- SY87700LZI
- SZA1010T
- T062
- T0816
- T0911XH
- T1451A
- T1896
- T3588CN
- T35L6432A-6Q
- T431
- T531A
- T65118ACD
- T6668
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- T6A40
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- T0806
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- T5001
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- T6A39
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- T7035MC
- T712
- T7213EC
- T7230ML3
- T7237ML
- T7264ML
- T7270ML
- T7296-EL
- T7525EC
- T7536ML
- T7570ML2
- T7700
- T7705A
- T7759
- T7C01F
- T9842B
- TA1101B
- TA1215AN
- TA1221AF
- TA1243BF
- TA1244FN
- TA1251CF
- TA1270AF
- TA1270F
- TA1287F
- TA1340F
- TA2002F
- TA2003
- TA2003P
- TA2009F
