STP4N20资料datasheet下载供应价格-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
STP4N20	文件：82.95 Kbytes Page：8 Pages	N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
EMDA4N20A	文件：219.33 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FQB4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：304.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD4N20L	文件：519.64 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20L	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20LTF	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20TF	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：688.08 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：302.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP4N20	文件：2.50977 Mbytes Page：9 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP4N20L	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20	文件：726 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •2.8A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20L	文件：541.4 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
STP4N20
制造商：
STMicroelectronics
功能描述：
TRANS MOSFET N-CH 200V 4A 3PIN TO-220 - Rail/Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市中利达电子科技有限公司	STP4N20	ST摩洛哥	22+	TO-220	7633	长源创新-只做原装----假一赔十	询价
深圳市勤思达科技有限公司	STP4N20	ST	2015+	TO220A	12500	全新原装,现货库存长期供应	询价
深圳市凌旭科技有限公司	STP4N20	ST	2016+	TO220	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
千层芯半导体(深圳)有限公司	STP4N20	ST	17+	TO-220	2500	原装现货热卖	询价
深圳市一线半导体有限公司	STP4N20	ST	03+	TO-220	600		询价
深圳市恒创达实业有限公司	STP4N20	ST	17+	TO-220	6200		询价
深圳市佳鑫美电子科技有限公司	STP4N20	ST	22+	TO-220	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	STP4N20	ST	22+23+	TO-220	27477	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	STP4N20	ST摩洛哥	19+	TO-220	9860	一级代理	询价
深圳兆威电子有限公司	STP4N20	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价

更多STP4N20供应商更新时间2024-6-14 15:15:00

详细参数

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