FQD4N20L规格书应用电路行情报价仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQD4N20L	文件：519.64 Kbytes Page：9 Pages	200V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20L	文件：526.71 Kbytes Page：9 Pages	200V LOGIC N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20LTF	文件：526.71 Kbytes Page：9 Pages	200V LOGIC N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
EMDA4N20A	文件：219.33 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FQB4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：304.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD4N20TF	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：688.08 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：302.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP4N20	文件：2.50977 Mbytes Page：9 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP4N20L	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20	文件：726 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •2.8A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20L	文件：541.4 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQT4N20	文件：629.01 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQD4N20L
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
200V LOGIC N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	FQD4N20L	FAIRCHILD	23+	TO-252(DP	12300	全新原装真实库存含13点增值税票!	询价
深圳市一线半导体有限公司	FQD4N20L	FAIRCHILD	08+(pbfree)	TO-252(DPAK)	8866		询价
深圳市星佑电子有限公司	FQD4N20L	仙童	06+	TO-252	8000	原装	询价
深圳市鑫宇杨电子科技有限公司	FQD4N20L	FAIRC	2020+	TO-252	10000	100%进口原装正品公司现货库存	询价
深圳市永贝尔科技有限公司	FQD4N20L	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳宇航军工半导体有限公司	FQD4N20L	FAIRCHILD	19+	TO-252(D	71789	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市科恒伟业电子有限公司	FQD4N20L	FAIRC	1822+	TO-252(DPAK)	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市宇集芯电子有限公司	FQD4N20L	FAIRCHIL	24+	TO-252	90000	一级代理商进口原装现货、价格合理	询价
深圳市赛芯源科技有限公司	FQD4N20L	FAIRCHILD	18+	TO-252(D	41200	原装正品,现货特价	询价
深圳兆威电子有限公司	FQD4N20L	VB	2019	D-PAK	55000	绝对原装正品假一罚十!	询价

更多FQD4N20L供应商更新时间2024-5-30 10:54:00

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