零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SMPSMOSFET FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.25Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A) FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated • | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS HiPerFET™PowerMOSFETsISOPLUS247™Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2 | IXYS IXYS Integrated Circuits Division | IXYS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST/意法 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
ST |
23+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
TO-220 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
22+ |
TO-220 |
97554 |
终端免费提供样品 可开48%增值税发票 |
询价 | ||
ST/意法 |
22+ |
TO-220 |
97554 |
询价 | |||
ST |
23+ |
TO-220 |
6000 |
原装,可配单 |
询价 | ||
ST |
22+ |
TO-220 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
21+ |
35200 |
一级代理/放心采购 |
询价 |
相关规格书
更多- STP30NE06
- STP40NF03L
- STP6NB50
- STP9NC60
- STPR1020CT
- STPR1620CT
- STPS140U
- STPS1L30U
- STPS20H100CT
- STPS3045CW
- STPS4045CW
- STPS40L15CW
- STPS745D
- STR10006
- STR12006
- STR2005
- STR30110
- STR30123
- STR30130
- STR40115
- STR4211
- STR50103
- STR50213
- STR54041
- STR58041
- STR6020
- STR80145
- STR81159
- STR9005
- STRD1706
- STRD6801
- STRF6653
- STRF6656
- STRS5707
- STRS5941
- STRS6308
- STRS6707
- STRS6709
- STS2DNF30L
- STT818B
- STV0056A
- STV0118A-ADP
- STV0119B-BCP
- STV0196B
- STV0199C
相关库存
更多- STP3NC60FP
- STP60NF06
- STP75NF75
- STPCD0175BTC3
- STPR1620CG
- STPR820D
- STPS1545CT
- STPS2045CT
- STPS3045CT
- STPS340U
- STPS40H100CW
- STPS60L45CW
- STPS8H100D
- STR11006
- STR20005
- STR2012
- STR30115
- STR30125
- STR3123
- STR41090
- STR50092
- STR50115
- STR53041
- STR5412
- STR59041
- STR62001
- STR81145
- STR83145
- STR9012
- STRD1806
- STRF6652
- STRF6654
- STRG6651
- STRS5741
- STRS6307
- STRS6309
- STRS6708
- STS12NF30L
- STS3DPFS30
- STV0042A
- STV0116CAX
- STV0119A-ADA
- STV0190
- STV0197
- STV0297D